TIP41C_07 Datasheet, PDF(4/12 Page) STMicroelectronics

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TIP41C_07 Datasheet, PDF (4/12 Pages) STMicroelectronics – Complementary power transistors

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Electrical characteristics

TIP41C - TIP42C

(Tcase = 25Â°C; unless otherwise specified)

Table 3. Electrical characteristics

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

ICEO

Collector cut-off current

(IB = 0)

VCE = 60 V

IEBO

Emitter cut-off current

(IC = 0)

VEB = 5 V

ICES

Collector cut-off current

(VBE = 0)

VCE = 100 V

VCEO(sus)(1)

Collector-emitter

sustaining voltage (IB = 0)

IC = 30 mA

VCE(sat)(1)

Collector-emitter

saturation voltage

IC = 6 A __

100

IB = 0.6 A

0.7 mA

1 mA

0.4 mA

1.5 V

VBE(on)(1) Base-emitter voltage

hFE(1)

DC current gain

IC = 6 A ___ VCE = 4 V

IC = 0.3 A_ _ VCE = 4 V 30

IC = 3 A ____ VCE = 4 V 15

Group R

Group O

Group Y

1. Pulsed duration = 300 ms, duty cycle â¥1.5%.

Note: 1 Product is pre-selected in DC current gain (group R, group O and group Y).

STMicroelectronics reserves the right to ship either groups according to production

availability. Please contact your nearest STMicroelectronics sales office for delivery details.

Note:

For PNP types voltage e current values are negative.

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