TDA7563 Datasheet, PDF (4/20 Pages) STMicroelectronics – MULTIFUNCTION QUAD POWER AMPLIFIER WITH BUILT-IN DIAGNOSTICS FEATURES

TDA7563
ELECTRICAL CHARACTERISTICS
(Refer to the test circuit, V_S = 14.4V; R_L = 4Ω; f = 1KHz; G_V = 30dB; T_amb = 25°C; unless otherwise specified.)
Symbol
Parameter
Test Condition
Min. Typ. Max. Unit
POWER AMPLIFIER
V_S Supply Voltage Range
8
18
V
I_d
Total Quiescent Drain Current
170 300 mA
P_O Output Power
EIAJ (V_S = 13.7V)
35
40
W
THD = 10%
THD = 1%
25
28
W
22
W
R_L = 2Ω; EIAJ (V_S = 13.7V)
55
62
W
R_L = 2Ω; THD 10%
40
46
W
R_L = 2Ω; THD 1%
35
W
R_L = 2Ω; MAX POWER
72
W
THD Total Harmonic Distortion
P_O = 1W to 10W; STD MODE
HE MODE; P_O = 1.5W
HE MODE; P_O = 8W
0.03 0.1
%
0.02 0.1
%
0.15 0.5
%
P_O = 1-10W, f = 10kHz
0.2
0.5
%
G_V = 16dB; STD Mode
V_O = 0.1 to 5VRMS
0.02 0.05
%
C_T Cross Talk
f = 1KHz to 10KHz, R_g = 600Ω
50
60
dB
R_IN Input Impedance
60
100 130
KΩ
G_V1 Voltage Gain 1
29.5
30
30.5
dB
∆G_V1 Voltage Gain Match 1
-1
1
dB
G_V2 Voltage Gain 2
15.5
16
16.5
dB
∆G_V2 Voltage Gain Match 2
-1
1
dB
E_IN1 Output Noise Voltage 1
R_g = 600Ω 20Hz to 22kHz
50
100 mV
E_IN2 Output Noise Voltage 2
R_g = 600Ω; GV = 16dB
20Hz to 22kHz
15
30
mV
SVR Supply Voltage Rejection
f = 100Hz to 10kHz; V_r = 1Vpk;
50
60
dB
R_g = 600Ω
BW Power Bandwidth
100
KHz
A_SB Stand-by Attenuation
90
110
dB
I_SB Stand-by Current
2
20
µA
A_M Mute Attenuation
80
100
dB
V_OS Offset Voltage
Mute & Play
-100
0
100 mV
V_AM Min. Supply Mute Threshold
7
7.5
8
V
T_ON Turn ON Delay
D2/D1 (IB1) 0 to 1
5
20
ms
T_OFF Turn OFF Delay
D2/D1 (IB1) 1 to 0
5
20
ms
V_SBY St-By/Mute pin for St-By
0
1.5
V
V_MU St-By/Mute pin for Mute
3.5
5
V
V_OP St-By/Mute pin for Operating
7
V_S
V
I_MU St-By/Mute pin Current
V_STBY/MUTE = 8.5V
20
40
µA
V_STBY/MUTE < 1.5V
0
10
µA
CD_LK Clip Det High Leakage Current CD off
0
15
µA
CD_SAT Clip Det Sat. Voltage
CD on; I_CD = 1mA
300
mV
CD_THD Clip Det THD level
D0 (IB1) = 1
5
10
15
%
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