STW40N95DK5 Datasheet, PDF (4/14 Pages) STMicroelectronics – Fast-recovery body diode

Electrical characteristics
STW40N95DK5, STWA40N95DK5
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5: On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS= 0 V
VGS = 0 V, VDS = 950 V
IDSS Zero gate voltage drain current _{VGS = 0 V, VDS = 950 V,}
TC= 125 °C⁽¹⁾
IGSS
VGS(th)
RDS(on)
Gate source leakage current
Gate threshold voltage
Static drain-source on-
resistance
VDS = 0 V, VGS = ± 20 V
VDD = VGS, ID = 100 µA
VGS = 10 V, ID = 19 A
Min. Typ. Max. Unit
950
V
1 µA
100 µA
±10 µA
3
4
5
V
0.120 0.130 Ω
Notes:
(1)_{Defined by design, not subject to production test}
Table 6: Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss Input capacitance
Coss Output capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0 V
Crss Reverse transfer capacitance
- 3480 - pF
- 235 - pF
-
2.3
-
pF
Co(tr)⁽¹⁾
Equivalent capacitance time
related
VGS = 0 V, VDS = 0 to 760 V
-
371
-
pF
Co(er)⁽²⁾
Equivalent capacitance
energy related
- 134 - pF
Rg Intrinsic gate resistance
f = 1 MHz, ID = 0 A
-
2
-
Ω
Qg Total gate charge
Qgs Gate source charge
Qgd Gate drain charge
VDD = 760 V, ID = 38 A,
- 100 - nC
VGS = 10 V
- 19.5 - nC
(see Figure 15: "Test circuit
for gate charge behavior")
- 67.6 - nC
Notes:
(1)_{Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS}
increases from 0 to 80% VDSS
(2)_{Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when}
VDS increases from 0 to 80% VDSS
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