STW35N60DM2 Datasheet, PDF (4/12 Pages) STMicroelectronics – Extremely high dv/dt ruggedness

Electrical characteristics
STW35N60DM2
2
Electrical characteristics
(T_case = 25 °C unless otherwise specified)
Table 5: Static
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
IDSS
Zero gate voltage drain
current
IGSS
Gate-body leakage
current
VGS = 0 V, VDS = 600 V
VGS = 0 V, VDS = 600 V,
Tcase = 125 °C
VDS = 0 V, VGS = ±25 V
VGS(th)
RDS(on)
Gate threshold voltage
Static drain-source on-
resistance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 14 A
Min. Typ. Max. Unit
600
V
10
µA
100
±5 µA
3
4
5
V
0.094 0.11 Ω
Table 6: Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss Input capacitance
Coss
Output
capacitance
VDS = 100 V, f = 1 MHz, VGS = 0 V
Crss
Reverse transfer
capacitance
- 2400 -
- 110
-
pF
-
2.8
-
Coss
(1)
eq.
Equivalent output
capacitance
VDS = 0 to 480 V, VGS = 0 V
RG
Intrinsic gate
resistance
f = 1 MHz, ID = 0 A
- 190 - pF
- 4.3
-
Ω
Qg Total gate charge
-
54
-
Qgs
Gate-source
charge
VDD = 480 V, ID = 28 A, VGS = 10 V (see
Figure 15: "Test circuit for gate charge
- 14.6 -
nC
behavior")
Qgd Gate-drain charge
- 24.2 -
Notes:
(1) _{Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS}
increases from 0 to 80% VDSS.
Symbol Parameter
td(on)
Turn-on
delay time
tr
Rise time
td(off)
Turn-off
delay time
tf
Fall time
Table 7: Switching times
Test conditions
Min. Typ. Max. Unit
- 21.2 -
VDD = 300 V, ID = 14 A RG = 4.7 Ω,
VGS = 10 V (see Figure 14: "Test circuit for
-
resistive load switching times" and Figure 19:
17
-
ns
"Switching time waveform")
-
68
-
- 10.7 -
4/12
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