STU7NF25 Datasheet, PDF (4/12 Pages) STMicroelectronics – Switching applications

Electrical characteristics
2
Electrical characteristics
STU7NF25
(T_CASE=25 °C unless otherwise specified).
Symbol
Parameter
Table 5. On/off states
Test conditions
Drain-source breakdown
V_{(BR)DSS voltage}
Zero gate voltage drain
I_{DSS current (VGS = 0)}
Gate body leakage current
I_GSS
(V_DS = 0)
V_GS(th) Gate threshold voltage
Static drain-source
R_{DS(on) on-resistance}
I_D = 1 mA, V_GS= 0
V_DS = 250 V
V_DS = 250 V, T_c=125 °C
V_GS = ±20 V
V_DS= V_GS, I_D = 250 μA
V_GS= 10 V, I_D= 4 A
Min. Typ. Max. Unit
250 -
V
1 μA
-
50 μA
- ±100 nA
2
-
4V
0.29 0.42 Ω
Symbol
Parameter
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 6. Dynamic
Test conditions
Min. Typ. Max. Unit
- 500 - pF
- 90 - pF
V_DS =25 V, f=1 MHz, V_GS=0
- 15 - pF
V_DD= 200 V, I_D = 8 A
V_GS =10 V
(see Figure 14)
- 16 - nC
- 3.5 - nC
- 8 - nC
Symbol
Parameter
Table 7. Switching times
Test conditions
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V_DD=125 V, I_D=4 A,
R_G=4.7 Ω, V_GS=10 V
(see Figure 13 and
Figure 18)
Min. Typ. Max. Unit
- 13 - ns
- 10 - ns
- 26 - ns
-
6
- ns
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