STTH16003TV Datasheet, PDF (4/5 Pages) STMicroelectronics – HIGH FREQUENCY SECONDARY RECTIFIER

STTH16003TV
Fig. 7: Relative variation of dynamic parameters
versus junction temperature (Reference:
Tj=125°C).
Fig. 8: Transient peak forward voltage versus
dIF/dt (90% confidence,per diode).
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
S factor
IRM
Tj(°C)
50
75
100
VFP(V)
8
7
IF=IF(av)
Tj=125°C
6
5
4
3
2
1
dIF/dt(A/µs)
0
125
0 50 100 150 200 250 300 350 400 450 500
Fig.9: Forward recovery time versus dI_F/dt (90%
confidence, per diode).
tfr(ns)
1000
900
800
700
600
500
400
300
200
100
0
0 50
VFR=1.1 x VF max.
IF=IF(av)
Tj=125°C
dIF/dt(A/µs)
100 150 200 250 300 350 400 450 500
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