STTH100W04C Datasheet, PDF (4/9 Pages) STMicroelectronics – Turbo 2 ultrafast high voltage rectifier

Characteristics
STTH100W04C
Figure 5.
trr(ns)
180
160
140
120
100
80
60
40
20
0
0
50
Reverse recovery time versus dI_F/dt Figure 6. Reverse recovery charges versus
(typical values, per diode)
dI_F/dt (typical values, per diode)
IF=IF(AV)
VR=320 V
Tj=125 °C
1600
1400
1200
QRR(nC)
IF=IF(AV)
VR=320 V
Tj=125 °C
1000
800
600
400
dIF/dt(A/µs)
100 150 200 250 300 350 400 450 500
200
0
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Figure 7.
Reverse recovery softness factor
versus dI_F/dt (typical values, per
diode)
S factor
0.6
IF=IF(AV)
VR=320 V
0.5
Tj=125 °C
0.4
0.3
Figure 8.
Relative variation of dynamic
parameters versus junction
temperature
2.0
SFACTOR
1.5
IF=IF(AV)
VR=320 V
Reference: Tj=125 °C
1.0
0.2
IRM
0.5
0.1
QRR
dIF/dt(A/µs)
0.0
0.0
25
50
0
50 100 150 200 250 300 350 400 450 500
Tj(°C)
75
100
125
Figure 9.
Transient peak forward voltage
versus dI_F/dt (typical values, per
diode)
VFP(V)
5
IF=IF(AV)
Tj=125 °C
4
Figure 10. Forward recovery time versus dI_F/dt
(typical values, per diode)
tfr(ns)
500
400
IF=IF(AV)
VFR=1.4 V
Tj=125 °C
3
300
2
200
1
dIF/dt(A/µs)
0
100
150
200
250
300
350
400
450
500
100
dIF/dt(A/µs)
0
100
150
200
250
300
350
400
450
500
4/8
Doc ID 023617 Rev 1