STPS30100ST Datasheet, PDF (4/7 Pages) STMicroelectronics – Power Schottky rectifier

Characteristics
STPS30100ST
Figure 7.
Reverse leakage current versus
reverse voltage applied (typical
values)
IR(mA)
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
Tj=50°C
Tj=25°C
1.E-03
1.E-04
0
VR(V)
10 20 30 40 50 60 70 80 90 100
Figure 8.
Junction capacitance versus
reverse voltage applied (typical
values)
C(pF)
10000
F=1M H z
Vosc=30m V
Tj=25°C
1000
100
1
VR (V)
10
100
Figure 9. Forward voltage drop versus
forward current (high level)
200 ^IFM(A)
180
160
140
Tj=125°C
(Maximum values)
120
100
80
Tj=125°C
(Typical values)
60
Tj=25°C
(Maximum values)
40
20
VFM(V)
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Figure 10. Forward voltage drop versus
forward current (low level)
IFM(A)
30
25
Tj=125°C
(Maximum values)
20
15
10
5
0
0.0
Tj=125°C
(Typical values)
0.2
0.4
Tj=25°C
(Maximum values)
VFM(V)
0.6
0.8
1.0
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