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STP6N120K3 Datasheet, PDF (4/17 Pages) STMicroelectronics – N-channel 1200 V, 1.95 Ω typ., 6 A SuperMESH3™ Power MOSFET in TO-3PF, TO-220 and TO-247 packages
◁
Electrical characteristics
STFW6N120K3, STP6N120K3, STW6N120K3
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On / off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = 1200 V
drain current (VGS = 0) VDS = 1200 V, TJ = 125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
Gate threshold voltage VDS = VGS, ID = 100 µA
Static drain-source on-
resistance
VGS = 10 V, ID = 2.5 A
Min. Typ. Max. Unit
1200 -
-
V
-
-
1 µA
50 µA
-
-
± 10 µA
3
4
5
V
-
1.95 2.4 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Co(tr) (1)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent
capacitance time
related
VDS = 100 V, f = 1 MHz,
VGS = 0
VGS = 0, VDS = 0 to 960 V
1050
pF
-
90
- pF
1
pF
-
40
- pF
Equivalent
Co(er) (2) capacitance energy
related
VGS = 0, VDS = 0 to 960 V
-
25
- pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
3
-
Ω
Qg
Total gate charge
VDD = 960 V, ID = 7.2 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 20)
39
nC
-
7.7
- nC
23.5
nC
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as
Coss when VDS increases from 0 to 80% VDSS.
2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS.
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Doc ID 15572 Rev 3
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