STP220N6F7 Datasheet, PDF (4/13 Pages) STMicroelectronics – High avalanche ruggedness

Electrical characteristics
STP220N6F7
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4: On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
Zero gate voltage
IDSS
drain current
IGSS
VGS(th)
RDS(on)
Gate-body leakage
current
Gate threshold
voltage
Static drain-source
on- resistance
VGS = 0, ID = 1 mA
VGS = 0, VDS = 60 V
VGS = 0, VDS = 60 V,
TC = 125 °C
VDS = 0, VGS = + 20 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 60 A
Min.
Typ.
Max.
Uni
t
60
V
1 µA
100 µA
100 nA
2
4
V
0.002 0.002
1
4
Ω
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
Table 5: Dynamic
Test conditions
VGS = 0, VDS = 25 V,
f = 1 MHz
Min.
-
-
Typ.
6400
3880
Max.
Uni
t
- pF
- pF
-
175
- pF
VDD = 30 V, ID = 120 A,
-
100
- nC
VGS = 10 V
-
36
- nC
(see Figure 14: "Test circuit
for gate charge behavior")
-
24
- nC
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6: Switching times
Test conditions
VDD = 30 V, ID = 60 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 13: "Test circuit
for resistive load switching
times")
Min.
-
-
-
-
Typ.
33
103
54
29
Max
.
Unit
-
ns
-
ns
-
ns
-
ns
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DocID026547 Rev 3