STP20NM50 Datasheet, PDF (4/16 Pages) STMicroelectronics – N-CHANNEL 500V - 0.20ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET

2 Electrical characteristics
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
Table 6. Switching times
Symbol
Parameter
t_d(on)
t_r
t_r(Voff)
t_f
t_c
Turn-on Delay Time
Rise Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_DD=250 V, I_D=10A,
R_G=4.7Ω, V_GS=10V
(see Figure 16)
V_DD=400 V, I_D=20A,
R_G=4.7Ω, V_GS=10V
(see Figure 16)
Table 7. Source drain diode
Symbol
Parameter
Test Conditions
I_SD
Source-drain Current
I_SDMNote 2 Source-drain Current (pulsed)
V_SDNote 4 Forward on Voltage
I_SD=20A, V_GS=0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD=20A, di/dt = 100A/µs,
V_DD=100 V, Tj=25°C
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD=20A, di/dt = 100A/µs,
V_DD=100 V, Tj=150°C
Min.
Min.
Typ. Max. Unit
24
ns
16
ns
9
ns
8.5
ns
23
ns
Typ. Max. Unit
20
A
80
A
1.5
V
350
ns
4.6
µC
26
A
435
ns
5.9
µC
27
A
(1) I_SD ≤20A, di/dt ≤400A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX
(2) Pulse width limited by safe operating area
(3) Limited only by maximum temperature allowed
(4) Pulsed: pulse duration = 300µs, duty cycle 1.5%
(5) C_{oss eq.} is defined as a constant equivalent capacitance giving the same charging time as C_oss when V_DS increases from 0
to 80% V_DSS
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