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| STP14NK60Z_07 Datasheet, PDF (4/19 Pages) STMicroelectronics – N-channel 600V - 0.45Ω - 13.5A TO-220/FP-D2/I2PAK-TO-247 Zener-protected SuperMESHTM Power MOSFET | |||
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Electrical ratings
STP14NK60Z-STP14NK60ZFP-STB14NK60Z-STB14NK60Z-1-STW14NK60Z
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAS
(pulse width limited by Tj Max)
Single pulse avalanche energy
EAS
(starting Tj=25°C, Id=Iar, Vdd=50V)
Value
Unit
12
A
300
mJ
Table 4. Gate-source zener diode
Symbol
Parameter
Test conditions Min. Typ. Max. Unit
BVGSO(1)
Igs=±1mA
Gate-source breakdown voltage
30
V
(Open Drain)
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the deviceâs
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the deviceâs integrity. These integrated Zener diodes thus avoid the
usage of external components.
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