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| STN951 Datasheet, PDF (4/8 Pages) STMicroelectronics – Low voltage fast-switching PNP power transistor | |||
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Electrical characteristics
2
Electrical characteristics
STN951
(Tcase = 25°C unless otherwise specified)
Table 3. Electrical characteristics
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ICBO
Collector cut-off current
(IE =0)
VCB = -60V
-0.1 µA
IEBO
Emitter cut-off current
(IC =0)
VEB = -5V
-0.1 µA
V(BR)CBO (2)
Collector-base
Breakdown voltage
IC = -100µA
-60
V
(IE =0)
V(BR)CEO (2)
Collector-emitter
Breakdown voltage
IC = -10mA
-60
V
(IB =0)
V(BR)EBO (2)
Collector-base
Breakdown voltage
IE = -100µA
-6
V
(IC =0)
VCE(sat) (2) Collector-emitter
saturation voltage
IC = -100mA
IC = -1A
IC = -2A
IC = -5A
IB = -5mA
IB = -50mA
IB = -50mA
IB = -200mA
-10 -50 mV
-70 -120 mV
-140 -250 mV
-350 -500 mV
VBE(sat) (2)
Base-emitter saturation
voltage
IC = -4A
IB = -200mA
-1 -1.15 V
VBE(on) (2) Base-emitter on voltage IC = -4A
VCE = -1V
-0.89 -1
V
hFE (2) DC current gain
IC = -10mA
IC = -2A
IC = -5A
IC = -10A
VCE = -1V
VCE = -1V
VCE = -1V
VCE = -1V
150 300
150 270 350
65 90
10 25
fT
Transition frequency
VCE = -10V IC = -100mA
130
MHz
CCBO
Collector-base
capacitance
VCB = -10V f = 1MHz
60
pF
Resistive load
ton
Turn-on time
ts
Storage time
tf
Fall time
80
ns
IC = -1A
VCC = -30V
600
ns
IB1 = - IB2 = -0.1A
70
ns
Note (2) Pulsed duration = 300 µs, duty cycle â¤1.5%
4/8
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