STH300NH02L-6 Datasheet, PDF (4/15 Pages) STMicroelectronics – Automotive-grade N-channel 24 V, 0.95 typ., 180 A

Electrical characteristics
2
Electrical characteristics
STH300NH02L-6
(Tcase = 25 °C unless otherwise specified)
Symbol
Parameter
Table 4. On /off states
Test conditions
Drain-source
V_(BR)DSS breakdown voltage
(V_GS= 0)
I_D = 250 μA
Zero gate voltage
V_DS = 24 V,
I_DSS
drain current (V_GS = 0) _{VDS = 24 V, TC=125 °C}
I_GSS
Gate body leakage
current (V_DS = 0)
V_GS = ± 20 V
V_GS(th) Gate threshold voltage V_DS= V_GS, I_D = 250 μA
Static drain-source on- ^VGS^{= 10 V, I}D^{= 80 A}
R_DS(on)
resistance
V_GS= 5 V, I_D= 40 A
Min. Typ. Max. Unit
24
V
1 μA
10 μA
± 100 nA
1
V
0.95 1.2 _mΩ
1.15 1.5
Symbol
Parameter
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 5. Dynamic
Test conditions
Min. Typ. Max. Unit
- 7050 - pF
- 3250 - pF
V_DS = 15 V, f = 1 MHz, V_GS =0
- 307 - pF
V_DD= 20 V, I_D= 120 A,
V_GS= 10 V
(see Figure 14)
- 109 - nC
-
30
- nC
-
26
- nC
Symbol
Parameter
t_d(on) Turn-on delay time
t_r Rise time
t_d(off) Turn-off delay time
t_f Fall time
Table 6. Switching times
Test conditions
V_DD = 20 V, I_D = 80 A
R_G= 4.7 Ω, V_GS= 10 V,
(see Figure 13)
V_DD = 20 V, I_D = 80 A
R_G= 4.7 Ω, V_GS= 10 V,
(see Figure 13)
Min. Typ. Max. Unit
-
18
- ns
- 275
- ns
- 138
- ns
- 94.4 - ns
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