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STGW30NC60KD Datasheet, PDF (4/14 Pages) STMicroelectronics – 30 A - 600 V - short circuit rugged IGBT
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Electrical characteristics
2
Electrical characteristics
STGW30NC60KD
(TCASE=25°C unless otherwise specified)
Table 4. Static
Symbol
Parameter
Test conditions
V(BR)CES
Collector-emitter breakdown
voltage (VGE= 0)
IC= 1 mA
VCE(sat)
ICES
VGE(th)
Collector-emitter saturation
voltage
Collector cut-off current
(VGE = 0)
Gate threshold voltage
VGE= 15 V, IC= 20 A
VGE= 15 V, IC= 20 A,
TC= 125 °C
VCE = 600 V
VCE = 600 V, TC= 125 °C
VCE= VGE, IC= 250 µA
IGES
Gate-emitter cut-off
current (VCE = 0)
VGE= ±20 V
gfs (1) Forward transconductance VCE = 15 V , IC = 20 A
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
600
V
2.1 2.7 V
1.9
V
150 µA
1 mA
4.5
6.5 V
±100 nA
15
S
Table 5. Dynamic
Symbol
Parameter
Cies
Coes
Cres
Qg
Qge
Qgc
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Test conditions
Min. Typ. Max. Unit
2170
pF
VCE = 25 V, f = 1 MHz, VGE= 0
230
pF
46
pF
VCE = 480 V, IC = 20 A,
VGE = 15 V
(see Figure 18)
96
nC
18
nC
46
nC
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