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STGD3HF60HDT4 Datasheet, PDF (4/16 Pages) STMicroelectronics – 4.5 A, 600 V very fast IGBT with Ultrafast diode
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Electrical characteristics
2
Electrical characteristics
STGD3HF60HD
(Tj=25 °C unless otherwise specified).
Table 4. Static electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Collector-emitter
V(BR)CES breakdown voltage
(VGE = 0)
VCE(sat)
Collector-emitter
saturation voltage
VGE(th)
ICES
IGES
gfs
Gate threshold voltage
Collector cut-off current
(VGE = 0)
Gate-emitter leakage
current (VCE = 0)
Forward
transconductance
IC = 1 mA
600
V
VGE= 15 V, IC= 0.5 A, Tj=125°C
VGE = 15 V, IC= 1.5 A
VGE= 15 V, IC= 1.5 A, Tj=125°C
1.4
2.45 2.95 V
1.85
VCE= VGE, IC= 250 µA
3.75
5.75 V
VCE = 600 V
VCE = 600 V, Tj= 125 °C
250 µA
1 mA
VGE = ±20 V
±100 nA
VCE = 15 V, IC= 1.5 A
1.5
S
Table 5. Dynamic electrical characteristics
Symbol
Parameter
Test conditions
Cies
Coes
Cres
Qg
Qge
Qgc
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
VCE = 25 V, f = 1 MHz,
VGE = 0
VCE = 480 V, IC = 1.5 A,
VGE = 15 V
(see Figure 18)
Min. Typ. Max. Unit
152
pF
-
14 - pF
3
pF
12
nC
-
2
-
nC
6
nC
4/16
Doc ID 17690 Rev 3
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