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STGB3NC120HD Datasheet, PDF (4/16 Pages) STMicroelectronics – Very soft ultrafast recovery anti-parallel diode
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Electrical characteristics
STGB3NC120HD, STGF3NC120HD, STGP3NC120HD
2
Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 4. Static electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Collector-emitter
V(BR)CES breakdown voltage
(VGE = 0)
IC = 1 mA
1200
V
VCE(sat)
Collector-emitter saturation VGE= 15 V, IC= 3 A
voltage
VGE= 15 V, IC= 3 A, TJ=125 °C
2.3 2.8 V
2.2
V
VGE(th) Gate threshold voltage
VCE= VGE, IC= 250µA
2
5V
ICES
Collector cut-off current
(VGE = 0)
VCE = 1200 V
VCE = 1200 V, TJ=125 °C
50 µA
1 mA
IGES
gfs (1)
Gate-emitter leakage
current (VCE = 0)
Forward transconductance
VGE =± 20 V
VCE = 25 V, IC= 3 A
± 100 nA
4
S
1. Pulse duration: 300 µs, duty cycle 1.5%
Table 5.
Symbol
Dynamic
Parameter
Cies
Coes
Cres
Qg
Qge
Qgc
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Test conditions
Min. Typ. Max. Unit
VCE = 25 V, f = 1 MHz, VGE=0
VCE = 960 V,
IC= 3 A,VGE=15 V
470
pF
- 45 - pF
6
pF
24
nC
-
3
- nC
10
nC
4/16
Doc ID 11089 Rev 4
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