STFU13N80K5 Datasheet, PDF (4/13 Pages) STMicroelectronics – Zener-protected

Electrical characteristics
STFU13N80K5
2
Electrical characteristics
(T_C = 25 °C unless otherwise specified)
Table 4: On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
Zero gate voltage
IDSS
drain current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source
on-resistance
VGS = 0 V, VDS = 800 V
VGS = 0 V, VDS = 800 V,
TC = 125 °C
VDS = 0 V, VGS = ±20 V
VDS = VGS, ID = 100 µA
VGS = 10 V, ID = 6 A
Min. Typ. Max. Unit
800
V
1 µA
50 µA
±10 µA
3
4
5
V
0.37 0.45 Ω
Symbol
Parameter
Table 5: Dynamic
Test conditions
Ciss
Coss
Crss
Co(tr)⁽¹⁾
Co(er)⁽²⁾
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent output capacitance
Equivalent capacitance
energy related
VDS = 100 V, f = 1 MHz,
VGS = 0 V
VGS = 0 V, VDS = 0 to 640 V
RG Intrinsic gate resistance
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
f = 1 MHz, ID = 0 A
VDD = 640 V, ID = 12 A,
VGS = 10 V
Min. Typ. Max. Unit
- 870 - pF
-
50
-
pF
-
2
- pF
- 110 - pF
43
pF
-
5
-
Ω
-
29
-
nC
-
7
- nC
-
18
-
nC
Notes:
(1)_{Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS}
increases from 0 to 80% VDSS.
(2)_{Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS}
increases from 0 to 80% VDSS.
Symbol
Parameter
td(on)
Turn-on delay
time
tr
Rise time
td(off)
Turn-off delay
time
tf
Fall time
Table 6: Switching times
Test conditions
VDD = 400 V, ID = 6 A, RG = 4.7 Ω,
VGS = 10 V
Min. Typ. Max. Unit
-
16
-
ns
-
16
-
ns
-
42
-
ns
-
16
-
ns
4/13
DocID028462 Rev 1