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| STE50DE100_07 Datasheet, PDF (4/11 Pages) STMicroelectronics – Hybrid emitter switched bipolar transistor ESBT 1000V - 50A - 0.026 ohm | |||
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Electrical characteristics
2
Electrical characteristics
STE50DE100
4/11
(Tcase = 25°C unless otherwise specified)
Table 3.
Symbol
Electrical characteristics
Parameter
Test Conditions
Min. Typ. Max. Unit
Collector-source current
ICS(SS) (VBS = VGS = 0)
VCE = 1000V
100 µA
Base-source current
IBS(OS) (IC = 0, VGS = 0)
VBS(OS) = 40V
10 µA
Source-base current
ISB(OS) (IC = 0, VGS = 0)
VSB(OS) = 10V
100 µA
IGS(OS) Gate-source leakage
VGS = ± 20V
500 nA
VCS(ON)
Collector-source ON
voltage
VGS = 10V IC = 50A IB = 10A
VGS = 10V_IC = 30A IB = 3A
1.3
V
1.1
V
hFE DC current gain
VGS = 10V_IC = 50A VCS = 1V
3
VGS = 10V_IC = 30A VCS = 1V
6
7
13
VBS(ON)
Base Source ON voltage VGS = 10V_ IC = 50A IB = 10A
VGS = 10V_ IC = 30A_ IB = 3A
2.2
1.4
V
V
VGS(th) Gate threshold voltage VBS = VGS ______IB = 250µA
3 3.7 4.5 V
CISS Input capacitance
VCS = 25V ______f = 1MHz
VGS = VCB = 0
2500
pF
QGS(tot) Gate-source charge
VCS = 25V _____VGS = 10V
VCB = 0
IC = 50A
60
nC
ts
INDUCTIVE LOAD
Storage time
tf
Fall time
IC = 25A IB = 5A VGS = 10V
VClamp = 800V RG = 47â¦
tp = 4µs
(see figure 13)
650
ns
10
ns
ts
INDUCTIVE LOAD
Storage time
tf
Fall time
IC = 25A IB = 2.5A VGS = 10V
VClamp = 800V RG = 47â¦
tp = 4µs
(see figure 13)
430
ns
6
ns
Maximum collector-
VCSW source voltage switched RG = 47⦠hFE = 5A IC = 35A 1000
V
without snubber
Collector-source
VCC = VClamp = 300V VGS = 10V
VCS(dyn) dynamic voltage
RG = 47⦠IC = 5A IB = 5A
5.5
V
(500ns)
IBpeak = IC = 25A tpeak = 500ns
Collector-source
VCC = VClamp = 300V VGS = 10V
VCS(dyn) dynamic voltage
RG = 47⦠IC = 5A IB = 5A
4.8
V
(1 µs)
IBpeak = IC = 25A tpeak = 500ns
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