STD90N4F3 Datasheet, PDF (4/14 Pages) STMicroelectronics – N-channel 40V - 5.4mΩ - 80A - DPAK - TO-220 - IPAK STripFET™ Power MOSFET

Electrical characteristics
2
Electrical characteristics
STD90N4F3 - STP90N4F3 - STU90N4F3
(T_CASE=25°C unless otherwise specified)
Table 4. Static
Symbol
Parameter
V_(BR)DSS
Drain-source breakdown
voltage
I_DSS
Zero gate voltage drain
current (V_GS = 0)
I_GSS
V_GS(th)
R_DS(on)
Gate body leakage current
(V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
I_D = 250 µA, V_GS= 0
40
V_DS = Max rating,
V_DS = Max rating,Tc = 125°C
V
10 µA
100 µA
V_GS = ±20 V
±200 nA
V_DS= V_GS, I_D = 250 µA
V_GS= 10 V, I_D= 40 A
2
4V
5.4 6.5 mΩ
Table 5. Dynamic
Symbol
Parameter
Test conditions
g_fs ⁽¹⁾ Forward transconductance
V_DS =25 V, I_D=40 A
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer capacitance
V_DS =25 V, f=1 MHz, V_GS=0
Q_{g Total gate charge}
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD=20 V, I_D = 80 A
V_GS =10 V
(see Figure 14)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min Typ. Max. Unit
100
S
2200
pF
580
pF
40
pF
40 54 nC
11
nC
8
nC
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