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| STD888T4 Datasheet, PDF (4/10 Pages) STMicroelectronics – Medium Current, High Performance, Low Voltage PNP Transistor | |||
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Electrical characteristics
2
Electrical characteristics
STD888T4
(Tcase = 25°C unless otherwise specified)
Table 3. Electrical characteristics
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ICBO
Collector cut-off current
(IE =0)
VCB = -30V
VCB = -30V; TC = 100°C
-10 µA
100 µA
IEBO
Emitter cut-off current
(IC =0)
VEB = -6V
-10 µA
V(BR)CEO (2)
Collector-emitter
breakdown voltage
IC = -10mA
-30
V
(IB =0)
Collector-base
V(BR)CBO breakdown voltage
IC = -100µA
-45
V
(IE =0)
V(BR)EBO
Emitter-base breakdown
voltage (IC =0)
IE = -100µA
-6
V
VCE(sat) (2) Collector-emitter
saturation voltage
IC = -0.5A
IC = -2A
IC = -5A
IC = -6A
IC = -8A
IC = -10A
IB = -5mA
IB = -50mA
IB = -250mA
IB = -250mA
IB = -400mA
IB = -500mA
-0.15 V
-0.35 V
-0.7 V
-0.7
V
-1
V
-1.2
V
VBE(sat) (2)
Base-emitter saturation
voltage
IC = -2A
IC = -6A
IB = -50mA
IB = -250mA
-1.1 V
-1.2
V
hFE (2) DC current gain
IC = -10mA VCE = -1V
IC = -500mA VCE = -1V
IC = -5A
VCE = -1V
IC = -5A
VCE = -1V
TC = 100°C
IC = -8A
VCE = -1V
IC = -10A VCE = -1V
120 200
100 200 300
70 100
100
55
35
Resistive load
td
Delay time
tr
Rise time
ts
Storage time
tf
Fall time
IC = -3A
VCC = -20V
IB1 = -IB2 = -60mA
(see figure 7)
180 220 ns
160 210 ns
250 300 ns
80 100 ns
Note (2) Pulsed duration = 300 µs, duty cycle â¤1.5%
4/10
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