STD85N3LH5 Datasheet, PDF (4/16 Pages) STMicroelectronics – N-channel 30 V, 0.0042 Ω , 80 A, DPAK, TO-220, IPAK STripFET™ V Power MOSFET

Electrical characteristics
STD85N3LH5 - STP85N3LH5 - STU85N3LH5
2
Electrical characteristics
(T_CASE = 25 °C unless otherwise specified)
Table 4. Static
Symbol
Parameter
V_(BR)DSS
Drain-source breakdown
Voltage
I_DSS
Zero gate voltage drain
current (V_GS = 0)
I_GSS
V_GS(th)
Gate body leakage current
(V_DS = 0)
Gate threshold voltage
R_DS(on)
Static drain-source on
resistance
Test conditions
I_D = 250 µA, V_GS= 0
V_DS = 20 V
V_DS = 20 V,Tc = 125 °C
V_GS = ± 22 V
V_DS = V_GS, I_D = 250 µA
V_GS = 10 V, I_D = 40 A
SMD version
V_GS = 10 V, I_D = 40 A
V_GS = 5 V, I_D = 40 A
SMD version
V_GS = 5 V, I_D = 40 A
Min. Typ. Max. Unit
30
V
1 µA
10 µA
±100 nA
1
2.5 V
0.042 0.005 Ω
0.0046 0.0054 Ω
0.0052 0.0065 Ω
0.0058 0.0071 Ω
Table 5. Dynamic
Symbol
Parameter
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
Q_gs1
Q_gs2
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Pre V_th gate-to-source
charge
Post V_th gate-to-source
charge
R_G Gate input resistance
Test conditions
V_DS = 25 V, f=1 MHz,
V_GS = 0
V_DD = 15 V, I_D = 80 A
V_GS = 5 V
(see Figure 16)
V_DD = 15 V, I_D = 80 A
V_GS = 5 V
(see Figure 19)
f = 1 MHz gate bias
Bias = 0 test signal
level = 20 mV
open drain
Min Typ. Max. Unit
1850
pF
380
pF
58
pF
14
nC
6.8
nC
4.7
nC
2.3
nC
4.5
nC
1.2
Ω
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