STD790AT4 Datasheet, PDF (4/10 Pages) STMicroelectronics – Medium Current, High Performance, Low Voltage PNP Transistor

Electrical characteristics
2
Electrical characteristics
STD790AT4
(T_case = 25°C unless otherwise specified)
Table 3. Electrical characteristics
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
I_CBO
Collector cut-off current
(I_E =0)
V_CB = -30V
V_CB = -30V; T_C= 100°C
I_EBO
Emitter cut-off current
(I_C =0)
V_EB = -4V
V_(BR)CEO ⁽²⁾
Collector-emitter
breakdown voltage
I_C = -10mA
-30
(I_B =0)
Collector-emitter
V_(BR)CER ^{(2) breakdown voltage}
I_C = -10mA
-40
(R_BE = 47Ω)
Collector-base
V_(BR)CBO ^{breakdown voltage}
I_C = -100µA
-40
(I_E =0)
V_(BR)EBO
Emitter-base breakdown
voltage (I_C =0)
I_E = -100µA
-5
V_CE(sat) ⁽²⁾ Collector-emitter
saturation voltage
I_C = -0.5A
I_C = -1.2A
I_C = -2A
I_C = -3A
I_C = -3A
T_J = 100°C
I_B = -5mA
I_B = -20mA
I_B = -20mA
I_B = -100mA
I_B = -100mA
V_BE(sat) ⁽²⁾
Base-emitter saturation
voltage
I_C = -1A
I_B = -10mA
-10 µA
100 µA
-10 µA
V
V
V
V
-0.15 V
-0.25 V
-0.5 V
-0.7 V
-0.9 V
-0.8 -1
V
V_BE(on) ⁽²⁾ Base-emitter on voltage ^IC ^{= -1A}
V_CE = -2V
-0.8 -1
V
h_FE ⁽²⁾ DC current gain
I_C = -10mA V_CE = -2V _{100 200 400}
I_C = -500mA V_CE = -2V _{100 200 400}
I_C = -1A
V_CE = -2V 100
I_C = -2A
V_CE = -1V 100 160
I_C = -3A
V_CE = -1V 90 130
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