STD70N2LH5 Datasheet, PDF (4/12 Pages) STMicroelectronics – N-channel 25 V, 0.006 Ω, 48 A - DPAK - IPAK STripFET™ V Power MOSFET

Electrical characteristics
STD70N2LH5 - STU70N2LH5
Table 6. Switching on/off (resistive load)
Symbol
Parameter
Test conditions
t_d(on)
t_r
Turn-on delay time
Rise time
V_DD=10 V, I_D= 24 A,
R_G=4.7 Ω, V_GS= 10 V
(Figure 2 and Figure 7)
t_d(off)
t_f
Turn-off delay time
Fall time
V_DD=10 V, I_D= 24 A,
R_G=4.7 Ω, V_GS= 10 V
(Figure 2 and Figure 7)
Min. Typ. Max. Unit
TBD
ns
TBD
ns
TBD
ns
TBD
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
I_SD
I_SDM
V_SD
t_rr
Q_rr
I_RRM
Source-drain current
Source-drain current (pulsed)⁽¹⁾
Forward on voltage
I_SD=24 A, V_GS=0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD=48 A,
di/dt =100 A/µs,
V_DD=20 V, Tj = 25 °C
(Figure 4)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
48 A
192 A
1.1 V
TBD
ns
TBD
nC
TBD
A
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