STD70N02L Datasheet, PDF (4/17 Pages) STMicroelectronics – N-channel 24V - 0.0068ohm - 60A - DPAK - IPAK STripFET TM III Power MOSFET

Electrical characteristics
2
Electrical characteristics
STD70N02L - STD70N02L-1
(Tcase =25°C unless otherwise specified)
Table 3. On /off states
Symbol
Parameter
Test conditions
V_(BR)DSS
Drain-source breakdown
voltage
I_D = 25mA, V_GS= 0
I_DSS
Zero gate voltage drain ^VDS ^{= 20V,}
current (V_GS = 0)
V_DS = 20V,Tc = 125°C
I_GSS
Gate body leakage
current (V_DS = 0)
V_GS = ±20V
V_GS(th) Gate threshold voltage V_DS= V_GS, I_D = 250µA
R_DS(on)
Static drain-source on
resistance
V_GS= 10V, I_D= 30A
V_GS= 5V, I_D= 15A
Min. Typ. Max. Unit
24
V
1 µA
10 µA
±100 nA
1
1.8
V
0.0068 0.008 Ω
0.090 0.014 Ω
Table 4. Dynamic
Symbol
Parameter
Test conditions
g_fs ⁽¹⁾
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
R_G Gate input resistance
V_DS =15V, I_D = 30A
V_DS =16V, f=1MHz, V_GS=0
V_DD=10V, I_D = 60A
V_GS =10V
(see Figure 15)
f=1MHz Gate DC Bias =0
test signal level =20mV
open drain
Q_OSS(2) Output charge
V_DS =16V, V_GS =0V
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. Q_oss.= C_oss * D Vin, C_oss = C_gd + C_gd. (see Appendix A)
Min. Typ. Max. Unit
27
S
1400
pF
400
pF
55
pF
24
32 nC
5
nC
3.4
nC
0.5 1.5
3
Ω
9.4
nC
4/17