STD60NF55LA Datasheet, PDF (4/14 Pages) STMicroelectronics – N-channel 55V - 0.012Ω - 60A - DPAK STripFET™ II Power MOSFET

Electrical characteristics
2
Electrical characteristics
STD60NF55LA
(T_CASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Drain-source
V_{(BR)DSS breakdown voltage}
I_DSS
I_GSS
V_GS(th)
Zero gate voltage
drain current (V_GS = 0)
Gate-body leakage
current (V_DS = 0)
Gate threshold voltage
R_DS(on)
Static drain-source on
resistance
I_D(on) On state drain current
Test conditions
Min. Typ. Max. Unit
I_D = 250µA, V_GS =0
55
V_DS = Max rating
V_DS = Max rating,@125°C
V_GS = ± 15V
V_DS = V_GS, I_D = 250µA
1
V_GS = 10V, I_D = 30A
V_GS = 5V, I_D = 30A
V_GS = 3.5V, V_DS >12V
35
-55°C < Tj < 150°C
V
1
µA
10 µA
±100 nA
2
V
0.012 0.015 Ω
0.014 0.017 Ω
A
Table 4. Dynamic
Symbol
Parameter
Test conditions
g_fs ⁽¹⁾
Forward
transconductance
V_DS = 10V, I_D = 30A
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 25V, f = 1MHz,
V_GS = 0
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V_DD = 25V, I_D = 30A
R_G = 4.7Ω V_GS = 4.5V
(see Figure 13)
Q_g
Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD = 40V, I_D = 60A,
V_GS = 5V, R_G = 4.7Ω
(see Figure 14)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min. Typ. Max. Unit
35
S
1950
pF
390
pF
130
pF
30
ns
180
ns
80
ns
35
ns
40
56 nC
10
nC
20
nC
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