STD5NM60_08 Datasheet, PDF (4/18 Pages) STMicroelectronics – N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK

Electrical characteristics
STP8NM60, STD5NM60, STB8NM60
Table 6. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
t_r(Voff)
t_f
t_c
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Off-voltage rise time
Fall time
Cross-over time
Test conditions
V_DD= 300 V, I_D= 2.5 A,
R_G= 4.7 Ω, V_GS=10 V
(see Figure 17)
V_DD= 480 V, I_D= 5 A,
R_G= 4.7 Ω, V_GS=10 V
Min. Typ. Max. Unit
14
ns
10
ns
23
ns
10
ns
7
ns
10
ns
17
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD Source-drain current
I_SDM(1) Source-drain current (pulsed)
V_SD(2) Forward on voltage
I_SD = 5A, V_GS=0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 5 A, V_DD=100 V
di/dt = 100 A/µs,
(see Figure 22)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 5 A, V_DD = 100 V
di/dt = 100 A/µs,
Tj=150 °C (see Figure 22)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
8
A
32 A
1.5 V
300
ns
1.95
µC
13
A
445
ns
3.00
µC
13.5
A
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