STD55NH2LL_06 Datasheet, PDF (4/16 Pages) STMicroelectronics – N-channel 24V - 0.010ohm - 40A - DPAK/IPAK Ultra low gate charge STripFET TM Power MOSFET

Electrical characteristics
2
Electrical characteristics
STD55NH2LL - STD55NH2LL-1
(T_CASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Drain-source
V_{(BR)DSS breakdown voltage}
I_DSS
Zero gate voltage
drain current (V_GS = 0)
I_GSS
V_GS(th)
R_DS(on)
Gate-body leakage
current (V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
I_D = 25mA, V_GS =0
24
V
V_DS = max rating
V_DS = max rating
T_C = 125°C
1
µA
10
µA
V_GS = ± 16V
±100 nA
V_DS = V_GS, I_D = 250µA
1
V
V_GS = 10V, I_D = 20A
V_GS = 4.5V, I_D = 20A
0.010 0.011 Ω
0.012 0.0135 Ω
Table 4. Dynamic
Symbol
Parameter
Test conditions
g_fs ⁽¹⁾
C_iss
C_oss
C_rss
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
R_G Gate Input Resistance
V_DS = 10V_, I_D = 10A
V_DS = 25V, f = 1MHz,
V_GS = 0
f = 1 MHz Gate
DC Bias = 0 Test Signal
Level = 20 mV Open
Drain
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V_DD = 10V, I_D = 20A
R_G = 4.7Ω V_GS = 4.5V
(see Figure 13)
Q_g
Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
0.44V ≤V_DD ≤10V,
I_D = 40A,
V_GS = 4.5V, R_G = 4.7Ω
(see Figure 14)
Q_oss(2) Output charge
V_DS= 16 V, V_GS= 0 V
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Qoss = Coss*∆ Vin , Coss = Cgd + Cds . See Chapter 4: Appendix A
Min.
Typ.
18
990
385
40
1.3
15
56
13
10
8.7
4.2
2.4
7.6
Max.
11
Unit
S
pF
pF
pF
Ω
ns
ns
ns
ns
nC
nC
nC
nC
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