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STD4NK60ZT4 Datasheet, PDF (4/28 Pages) STMicroelectronics – N-channel 600 V, 1.76 Ω, 4 A SuperMESH™ Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP
Electrical ratings
STB4NK60Zx, STD4NK60Zx, STP4NK60Z, STP4NK60ZFP
Table 4. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAR
(pulse width limited by Tj Max)
Single pulse avalanche energy
EAS
(starting TJ = 25 °C, ID=IAR, VDD= 50 V)
Value
Unit
4
A
120
mJ
4/28
Doc ID 8882 Rev 7