STD46N6F7 Datasheet, PDF (4/14 Pages) STMicroelectronics – Among the lowest RDS on the market

Electrical characteristics
STD46N6F7
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4: On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
IDSS
IGSS
Drain-source breakdown voltage
Zero gate voltage
drain current
Gate-body leakage
current
ID = 1 mA, VGS = 0 V
VGS = 0 V
VDS = 60 V
VGS = 20 V, VDS = 0 V
VGS(th)
RDS(on)
Gate threshold voltage
Static drain-source
on-resistance
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 7.5 A
Min. Typ. Max. Unit
60
V
1
µA
100 nA
2
4
V
0.012 0.014 Ω
Table 5: Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss Input capacitance
Coss Output capacitance
VDS = 30 V, f = 1 MHz,
VGS = 0 V
Crss Reverse transfer capacitance
- 1035 - pF
- 450 - pF
-
53
-
pF
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 30 V, ID = 15 A,
-
17
- nC
VGS = 10 V (see Figure 14:
-
5.7
-
nC
"Test circuit for gate charge
behavior")
-
5.7
-
nC
Symbol
Parameter
td(on) Turn-on delay time
tr
Rise time
td(off) Turn-off delay time
tf
Fall time
Table 6: Switching times
Test conditions
VDD = 30 V, ID = 7.5 A,
RG = 4.7 Ω, VGS = 10 V (see
Figure 13: "Test circuit for
resistive load switching times")
Min. Typ. Max. Unit
- 14.5 -
ns
- 15.3 -
ns
- 19.4 -
ns
-
8
-
ns
Symbol
VSD⁽¹⁾
trr
Qrr
IRRM
Table 7: Source-drain diode
Parameter
Test conditions
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 15 A, VGS = 0 V
ID = 15 A, di/dt = 100 A/µs
VDD = 48 V (see Figure 15:
"Test circuit for inductive load
switching and diode recovery
times")
Notes:
(1)_{Pulsed: pulse duration = 300 µs, duty cycle 1.5%}
Min. Typ. Max. Unit
-
1.2 V
- 26.8
ns
- 14.2
nC
- 1.06
A
4/14
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