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| STD35NF3LL_07 Datasheet, PDF (4/13 Pages) STMicroelectronics – N-channel 30V - 0.014ohm - 35A - DPAK STripFET TM II Power MOSFET | |||
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Electrical characteristics
2
Electrical characteristics
STD35NF3LL
(TCASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Test conditions
Min.
Drain-source
V(BR)DSS breakdown voltage
ID = 250µA, VGS =0
30
IDSS
Zero gate voltage
VDS = Max rating
drain current (VGS = 0) VDS = Max rating @125°C
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 16V
VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA
1
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 17.5A
VGS = 4.5V, ID = 17.5A
Typ. Max. Unit
V
1
µA
10
µA
±100 nA
2.5
V
0.014 0.0195 â¦
0.016 0.0215 â¦
Table 4. Dynamic
Symbol
Parameter
Test conditions
gfs (1)
Forward
transconductance
VDS = 15V, ID = 17.5A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 15V, ID = 17.5A
RG = 4.7⦠VGS = 4.5V
(see Figure 12)
Qg
Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 24V, ID = 35A,
VGS = 5V, RG = 4.7â¦
(see Figure 13)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Min. Typ. Max. Unit
19
S
800
pF
250
pF
60
pF
17
ns
100
ns
20
ns
21
ns
12.5
17
nC
42
nC
5.2
nC
4/13
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