STD30NF03LT Datasheet, PDF (4/13 Pages) STMicroelectronics – N-channel 30V - 0.017ohm - 30A - DPAK STripFET TM II Power MOSFET

Electrical characteristics
2
Electrical characteristics
STD30NF03LT
(T_CASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Drain-source
V_{(BR)DSS breakdown voltage}
I_DSS
Zero gate voltage
drain current (V_GS = 0)
I_GSS
V_GS(th)
R_DS(on)
Gate-body leakage
current (V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
I_D = 250µA, V_GS =0
30
V
V_DS = Max rating
V_DS = Max rating,
T_C = 125°C
1
µA
10
µA
V_GS = ± 20V
±100 nA
V_DS = V_GS, I_D = 250µA
1
1.7
2.5
V
V_GS = 6V, I_D = 15A
V_GS = 105V, I_D = 15A
0.025 0.035 Ω
0.017 0.025 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
g_fs ⁽¹⁾
Forward
transconductance
V_DS = 15V, I_D = 15A
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 25V, f = 1MHz,
V_GS = 0
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V_DD = 15V, I_D = 15A
R_G = 4.7Ω V_GS = 6V
(see Figure 12)
Q_g
Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD = 15V, I_D = 30A,
V_GS = 6V, R_G = 4.7Ω
(see Figure 13)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Min. Typ. Max. Unit
30
S
750
pF
280
pF
70
pF
15
ns
30
ns
20
ns
10
ns
13
18
nC
5.5
nC
5
nC
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