STD20NF06L Datasheet, PDF (4/14 Pages) STMicroelectronics – N-channel 60V - 0.032OHM - 24A - DPAK - IPAK STripFET II Power MOSFET

Electrical characteristics
2
Electrical characteristics
STD20NF06L - STD20NF06L-1
(Tcase =25°C unless otherwise specified)
Table 3. On /off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V_(BR)DSS
Drain-source breakdown
voltage
I_D = 250µA, V_GS= 0
60
I_DSS
Zero gate voltage drain ^VDS ^{= Max rating,}
current (V_GS = 0)
V_DS = Max rating,Tc = 125°C
I_GSS
Gate body leakage
current (V_DS = 0)
V_GS = ±18V
V_GS(th) Gate threshold voltage V_DS= V_GS, I_D = 250µA
1
R_DS(on)
Static drain-source on
resistance
V_GS= 10V, I_D= 12A
V_GS= 5V, I_D= 12A
V
1 µA
10 µA
±100 nA
2.5 V
0.032 0.040 Ω
0.050 Ω
Table 4. Dynamic
Symbol
Parameter
Test conditions
g_fs ⁽¹⁾
Forward
transconductance
V_DS =25V, I_D = 12A
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS =25V, f=1MHz, V_GS=0
Q_g
Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD=30V, I_D = 20A
V_GS =10V
(see Figure 12)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
20
S
660
pF
170
pF
70
pF
13
nC
3.5
nC
8
nC
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