STD16NF25 Datasheet, PDF (4/16 Pages) STMicroelectronics – N-channel 250V - 0.195Ω - 13A - DPAK/TO-220/TO-220FP Low gate charge STripFET™ II Power MOSFET

Electrical characteristics
2
Electrical characteristics
STD16NF25 - STF16NF25 - STP16NF25
(T_CASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Drain-source
V_{(BR)DSS breakdown voltage}
I_DSS
Zero gate voltage
drain current (V_GS = 0)
I_GSS
V_GS(th)
R_DS(on)
Gate-body leakage
current (V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
I_D = 1mA, V_GS =0
250
V
V_DS = max ratings
V_DS = max ratings,
T_C = 125°C
1
µA
10
µA
V_GS = ± 20V
±100 nA
V_DS = V_GS, I_D = 250µA
2
3
4
V
V_GS = 10V, I_D = 6.5A
0.195 0.235 Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
g_fs ⁽¹⁾
Forward
transconductance
V_DS = 15V, I_D = 6.5A
10
S
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 25V, f = 1MHz,
V_GS = 0
680
pF
125
pF
20
pF
C_oss
(2)
eq.
Equivalent output
capacitance
V_DS = 0V to 200V,
V_GS = 0
48
pF
R_G Intrinsic gate resistance f=1MHz, open drain
2.1
Ω
t_d(on)
t_r
t_d(off)
Turn-on delay time
Rise time
Turn-off delay time
V_DD = 125V, I_D = 6.5A
R_G = 4.7Ω V_GS = 10V
(see Figure 18)
9
17
35
ns
ns
ns
t_f
Fall time
17
ns
Q_g
Total gate charge
V_DD = 200V, I_D = 6.5A,
18
nC
Q_gs Gate-source charge
V_GS = 10V
3
nC
Q_gd Gate-drain charge
(see Figure 19)
8
nC
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
2. C_{oss eq.} is defined as a constant equivalent capacitance giving the same charging time as C_oss when V_DS
increases from 0 to 80%
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