STD16NF06T4 Datasheet, PDF (4/11 Pages) STMicroelectronics – N-Channel 60V - 0.060Ω - 16A - DPAK STripFET™ II Power MOSFET

2 Electrical characteristics
STD16NF06
Table 6. Source drain diode
Symbol
Parameter
Test Conditions
I_SD
Source-drain Current
I_SDM Note 4 Source-drain Current (pulsed)
V_SD Note 5 Forward on Voltage
I_SD = 8A
V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD = 16A, di/dt = 100A/µs,
V_DD = 20V, T_J =150°C
Figure 15 on page 7
Min.
Note: 1 Value limited by wire bonding
2 Garanted when external Rg=4.7 Ω and t_f < t_fmax.
3 Starting T_J = 25°C, I_D = 19A, V_DD = 18V
4 Pulse width limited by safe operating area
5 Pulsed: pulse duration = 300µs, duty cycle 1.5%
Typ. Max. Unit
16
A
64
A
1.5
V
49
ns
78
µC
3.2
A
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