STD12NF06L_07 Datasheet, PDF (4/14 Pages) STMicroelectronics – N-channel 60V - 0.08Ω - 12A - DPAK - IPAK STripFET™ II Power MOSFET

Electrical characteristics
2
Electrical characteristics
STD12NF06L
(T_CASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Test conditions
V_(BR)DSS
Drain-source breakdown
voltage
I_D = 25mA, V_GS = 0
I_DSS
Zero gate voltage drain
current (V_GS = 0)
V_DS = Max rating
V_DS = Max rating,
T_C = 125°C
I_GSS
Gate body leakage current
(V_DS = 0)
V_GS = ±20V
V_GS(th) Gate threshold voltage
V_DS= V_GS, I_D = 250µA
R_DS(on)
Static drain-source on
resistance
V_GS = 10V, I_D = 6A
V_GS = 5V, I_D = 6A
Min. Typ. Max. Unit
60
V
1 µA
10 µA
±100 nA
1
2
V
0.08 0.10 ^Ω
0.10 0.12 _Ω
Table 4. Dynamic
Symbol
Parameter
Test conditions
g_fs ⁽¹⁾ Forward transconductance V_DS = 25V_, I_D = 6A
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 25V, f = 1 MHz,
V_GS = 0
Q_{g Total gate charge}
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD = 48V, I_D = 12A
V_GS = 5V
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
7
S
350
pF
75
pF
30
pF
7.5 10 ^nC
2.5
nC
3.0
nC
Table 5. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V_DD = 30V, I_D = 6A,
R_G = 4.7Ω, V_GS = 4.5V
Figure 12 on page 8
Min. Typ. Max. Unit
10
ns
35
ns
20
ns
13
ns
4/14