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STD12N50M2 Datasheet, PDF (4/16 Pages) STMicroelectronics – Zener-protected
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Electrical characteristics
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Symbol
Parameter
Table 5. On /off states
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
Zero gate voltage
drain current
IGSS
Gate-body leakage
current
VGS = 0, VDS = 500 V
VGS = 0, VDS = 500 V,
TC=125 °C
VDS = 0, VGS = ± 25 V
VGS(th)
RDS(on)
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source
on-resistance
VGS = 10 V, ID = 5 A
STD12N50M2
Min. Typ. Max. Unit
500
V
1 µA
100 µA
±10 µA
2
3
4
V
0.325 0.38 Ω
Symbol
Parameter
Table 6. Dynamic
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VGS = 0, VDS = 100 V,
f = 1 MHz
-
550
- pF
-
33
- pF
-
1
- pF
Coss
(1)
eq.
Equivalent output
capacitance
VGS = 0, VDS = 0 to 400 V
-
125
- pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
6.8
-
Ω
Qg Total gate charge
Qgs
Gate-source charge
VDD = 400 V, ID = 10 A,
VGS = 10 V (see Figure 15)
Qgd Gate-drain charge
-
15
- nC
-
3
- nC
-
8.3
- nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
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