STD110NH02L_06 Datasheet, PDF (4/15 Pages) STMicroelectronics – N-channel 24V - 0.0044ohm - 80A - DPAK STripFET TM III Power MOSFET

Electrical characteristics
2
Electrical characteristics
STD110NH02L
(T_CASE=25°C unless otherwise specified)
Table 3. On⁽¹⁾ /off states
Symbol
Parameter
Test conditions
V_(BR)DSS
Drain-source breakdown
voltage
I_D = 25mA, V_GS = 0
I_DSS
Zero gate voltage drain
current (V_GS = 0)
V_DS = 20
V_DS = 20, T_C = 125°C
I_GSS
Gate body leakage current
(V_DS = 0)
V_GS = ±20V
V_GS(th) Gate threshold voltage
V_DS= V_GS, I_D = 250µA
R_DS(on)
Static drain-source on
resistance
V_GS = 10V, I_D = 40A
V_GS = 5V, I_D = 20A
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
24
V
1 µA
10 µA
±100 nA
1
V
0.0044 0.0050 Ω
0.0050 0.0095 Ω
Table 4. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
g_fs ⁽¹⁾
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
Q_oss(2)
Q_gls(3)
R_G
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 10 V_, I_D = 40A
V_DS = 15V, f = 1 MHz,
V_GS = 0
Total gate charge
Gate-source charge
Gate-drain charge
V_DD = 10V, I_D = 80A
V_GS = 10V
Output charge
Third-quadrant gate charge
Gate input resistance
V_DS = 16V, V_GS = 0V
V_DS < 0V, V_GS = 10V
f = 1MHz gate DC Bias = 0
Test signal level = 20mV
Open drain
52
S
4450
pF
1126
pF
141
pF
69 93 nC
13
nC
9
nC
27
nC
64
nC
16
Ω
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Q_{oss =} C_oss*∆ V_{in ,} C_{oss =} C_{gd +} C_{ds .} See Section Appendix A
3. Gate charge for synchronous operation
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