STC6NF30V_07 Datasheet, PDF (4/13 Pages) STMicroelectronics – N-channel 30V - 0.020ohm - 6A - TSSOP8 2.5V-drive STripFE TM II Power MOSFET

Electrical characteristics
2
Electrical characteristics
STC6NF30V
(T_J = 25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V_(BR)DSS
Drain-source breakdown
voltage
I_D = 250µA, V_GS= 0
30
V
I_DSS
Zero gate voltage drain
current (V_GS = 0)
V_DS = Max rating,
V_DS = Max rating @125°C
1 µA
10 µA
I_GSS
Gate body leakage current
(V_DS = 0)
V_GS = ±12V
±100 nA
V_GS(th) Gate threshold voltage
V_DS= V_GS, I_D = 250µA
0.6
V
R_DS(on)
Static drain-source on
resistance
V_GS= 4.5V, I_D= 3A
V_GS =2.5V, I_D = 3A
0.020 0.025 Ω
0.025 0.030 Ω
Table 4. Dynamic
Symbol
Parameter
Test conditions
g_fs ⁽¹⁾ Forward transconductance V_DS = 10V, I_D = 6A
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS =25V, f = 1 MHz,
V_GS = 0
Q_{g Total gate charge}
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD =15V, I_D = 6A
V_GS = 2.5V
Figure 16 on page 9
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
18
S
800
pF
180
pF
32
pF
6.8 9 nC
2.0
nC
3.4
nC
Table 5. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V_DD = 15V, I_D = 3A,
R_G = 4.7Ω, V_GS = 2.5V
Figure 14 on page 9
Min. Typ. Max. Unit
20
ns
25
ns
32
ns
13
ns
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