STC5NF20V_07 Datasheet, PDF (4/12 Pages) STMicroelectronics – N-channel 20V - 0.030ohm - 5A - TSSOP8 2.7V-drive STripFET TM ll Power MOSFET

Electrical characteristics
2
Electrical characteristics
STC5NF20V
(T_CASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V_(BR)DSS
Drain-source breakdown
voltage
I_D = 250µA, V_GS= 0
20
V
I_DSS
Zero gate voltage drain
current (V_GS = 0)
V_DS = Max rating,
V_DS = Max rating @125°C
1 µA
10 µA
I_GSS
Gate body leakage current
(V_DS = 0)
V_GS = ±12V
±100 nA
V_GS(th) Gate threshold voltage
V_DS= V_GS, I_D = 250µA
0.6
V
R_DS(on)
Static drain-source on
resistance
V_GS= 4.5V, I_D= 2.5A
V_GS =2.7V, I_D = 2.5A
0.030 0.040 Ω
0.037 0.045 Ω
Table 4. Dynamic
Symbol
Parameter
Test conditions
g_fs ⁽¹⁾ Forward transconductance
V_DS = 15 V, I_D = 2.5A
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS =15V, f = 1 MHz,
V_GS = 0
Q_{g Total gate charge}
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD =10V, I_D = 4.5A
V_GS =4.5V
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
9.5
S
460
pF
200
pF
50
pF
8.5 11.5 nC
1.8
nC
2.4
nC
Table 5. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
t_d(off)
t_f
t_c
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Off-voltage rise time
Fall time
Cross-over time
Test conditions
V_DD= 10V, I_D= 2.5A,
R_G=4.7Ω, V_GS=4.5V
Figure 13 on page 8
Vclamp =16V, I_D = 5A
R_G = 4.7Ω, V_GS = 4.5V
Figure 15 on page 8
Min. Typ. Max. Unit
7
ns
33
ns
27
ns
10
ns
26
ns
11
ns
21
ns
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