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| STC20DE90HV Datasheet, PDF (4/11 Pages) STMicroelectronics – Hybrid emitter switched bipolar transistor ESBT 900V - 20A - 0.06 ohm | |||
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Electrical characteristics
2
Electrical characteristics
STC20DE90HV
(Tcase = 25°C unless otherwise specified)
Table 4. Electrical characteristics
Symbol
Parameter
Test Conditions
ICS(SS)
IBS(OS)
ISB(OS)
IGS(OS)
VCS(ON)
hFE
VBS(ON)
VGS(th)
Ciss
QGS(tot)
ts
tf
ts
tf
VCS(dyn)
Collector-source current
(VBS =VGS =0V)
VCS(SS) =900V
Base-source current
(IC =0, VGS =0V)
VBS(OS) =30V
Source-base current
(IC =0, VGS =0V)
VSB(OS) =9V
Gate-source leakage
(VBS =0V)
VGS = ± 20V
Collector-source ON
voltage
VGS =10V IC =20A IB =4A
VGS =10V IC =10A IB =1A
DC current gain
VCS =1V VGS =10V IC =20A
VCS =1V VGS =10V IC =10A
Base-source ON
voltage
VGS =10V IC =20A IB =4A
VGS =10V IC =10A IB =1A
Gate threshold voltage VBS =VGS
IB =250µA
Input capacitance
VCS =25V
f =1MHz
VGS=VCB=0V
Gate-source Charge
VCS=25V
VCB=0V
VGS=10V
IC =20A
INDUCTIVE LOAD
Storage time
Fall time
VGS =10V
VClamp =720V
IC =10A
RG =47â¦
tp =4µs
IB =2A
INDUCTIVE LOAD
Storage time
Fall time
VGS =10V
VClamp =720V
IC =10A
RG =47â¦
tp =4µs
IB =1A
Collector-source
dynamic voltage
(500ns)
VCC =VClamp =400V
VGS =10V
IC =10A
IB = 2A
RG =47â¦
tpeak =500ns
IBpeak =10A
Min. Typ. Max. Unit
100 µA
10 µA
100 µA
500 nA
1.2
V
0.65
V
4
12
1.8
V
1.2
V
1.5 2.2 3
V
750
pF
12.5
nC
775
ns
7
ns
510
ns
5
ns
2.3
V
4/11
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