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| STC03DE220HV Datasheet, PDF (4/8 Pages) STMicroelectronics – Hybrid emitter switched bipolar transistor ESBT 2200V - 3A - 0.33OHM | |||
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Electrical characteristics
2
Electrical characteristics
STC03DE220HV
(Tcase = 25°C unless otherwise specified)
Table 4. Electrical characteristics
Symbol
Parameter
Test Conditions
ICS(SS)
IBS(OS)
ISB(OS)
IGS(OS)
VCS(ON)
hFE
VBS(ON)
VGS(th)
Ciss
QGS(tot)
ts
tf
VCS(dyn)
VCS(dyn)
VCSW
Collector-source current
(VBS =VGS =0V)
VCS(SS) =2200V
Base-source current
(IC =0, VGS =0V)
VBS(OS) =30V
Source-base current
(IC =0, VGS =0V)
VSB(OS) =9V
Gate-source leakage
(VBS =0V)
VGS = ± 20V
Collector-source ON
voltage
VGS =10V IC =3A IB =0.3A
VGS =10V IC =6A IB =1.2A
DC current gain
VCS =1V VGS =10V IC =3A
VCS =1V VGS =10V IC =6A
Base-source ON
voltage
VGS =10V IC =3A IB =0.3A
VGS =10V IC =6A IB =1.2A
Gate threshold voltage VBS =VGS IB =250µA
Input capacitance
VCS =25V f =1MHz
VGS=VCB=0V
Gate-source Charge
VCS=15V
VCB=0V
VGS=10V
IC =1.8A
INDUCTIVE LOAD
Storage time
Fall time
VGS =10V
VClamp =1760V
IC =1.5A
RG =47â¦
tp =4µs
IB =0.3A
Collector-source
dynamic voltage
(500ns)
VCC =VClamp =400V
VGS =10V
IC =1.5A
IB = 0.3A
RG =47â¦
tpeak =500ns
IBpeak =3A
Collector-source
dynamic voltage
(1µs)
VCC =VClamp =400V
VGS =10V
IC =1.5A
IB = 0.3A
RG =47â¦
tpeak =500ns
IBpeak =3A
Maximum collector-
source voltage switched RG =47â¦
without snubber
hFE =5
IC = 3A
Min. Typ. Max. Unit
100 µA
10 µA
100 µA
500 nA
1
V
1
V
10
5
0.9
V
1.2
V
1.5 2.2 3
V
750
pF
12.5
nC
1040
ns
20
ns
7.6
V
5.8
V
2200
V
4/8
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