STC03DE170HV_07 Datasheet, PDF (4/9 Pages) STMicroelectronics – Hybrid emitter switched bipolar transistor ESBT® 1700V - 3A - 0.33 W

Electrical characteristics
STC03DE170HV
Table 4. Electrical characteristics
Symbol
Parameter
Test Conditions
V_CS(dyn)
V_CSW
Collector-source
dynamic voltage
(1µs)
V_CC =V_Clamp =400V
V_GS =10V
I_C =1.5A
I_B = 0.1A
R_G =47Ω
t_peak =500ns
I_Bpeak =3A
Maximum collector-
source voltage switched R_G =47Ω
without snubber
h_FE =5
I_C = 4A
Min. Typ. Max. Unit
9.5
V
1700
V
Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5%
2.1
Electrical characteristics (curves)
Figure 2. Output characteristics
Figure 3. Dynamic collector-source
saturation voltage
Figure 4. Reverse biased safe
operating area
Figure 5. Gate threshold voltage vs
temperature
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