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| STC03DE170HV_06 Datasheet, PDF (4/11 Pages) STMicroelectronics – Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.55 OHM | |||
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Electrical characteristics
2
Electrical characteristics
STC03DE170HV
(Tcase = 25°C unless otherwise specified)
Table 4. Electrical characteristics
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ICS(SS)
Collector-source current
(VBS =VGS =0V)
VCS(SS) =1700V
100 µA
IBS(OS)
Base-source current
(IC =0, VGS =0V)
VBS(OS) =30V
10 µA
ISB(OS)
Source-base current
(IC =0, VGS =0V)
VSB(OS) =9V
100 µA
Gate-source leakage
IGS(OS) (VBS =0V)
VGS = ± 20V
500 nA
VCS(ON)
Collector-source ON
voltage
VGS =10V IC =1.8A IB =0.36A
VGS =10V IC =0.7A IB =70mA
1 1.5 V
1 1.3 V
hFE DC current gain
VCS =1V VGS =10V IC =1.8A 3.5
5
VCS =1V VGS =10V IC =0.7A 6
10
VBS(ON)
Base-source ON
voltage
VGS =10V IC =1.8A IB =0.36A
VGS =10V IC =0.7A IB =70mA
1 1.2 V
0.8 1
V
VGS(th) Gate threshold voltage VBS =VGS IB =250µA
1.5 2.2 3
V
Ciss Input capacitance
VCS =25V f =1MHz
VGS=0V
750
pF
QGS(tot) Gate-source Charge
VCS=15V
VCB=0V
VGS=10V
IC =1.8A
12.5
nC
ts
tf
INDUCTIVE LOAD
Storage time
Fall time
VGS =10V
VClamp =1200V
IC =1.8A
RG =47â¦
tp =4µs
IB =0.36A
760
14
ns
ns
ts
tf
INDUCTIVE LOAD
Storage time
Fall time
VGS =10V
VClamp =1200V
IC =0.7A
RG =47â¦
tp =4µs
IB =70mA
690
32
ns
ns
VCC =VClamp =400V
VCS(dyn)
Collector-source
dynamic voltage
(500ns)
VGS =10V
IB = 0.1A
IC =0.5A
RG =47â¦
3.9
V
tpeak =500ns
IBpeak =1A
4/11
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