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| STB80PF55_10 Datasheet, PDF (4/16 Pages) STMicroelectronics – P-channel 55 V, 0.016 Ω, 80 A TO-220, D2PAK STripFETTM II Power MOSFET | |||
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Electrical characteristics
2
Electrical characteristics
STB80PF55, STP80PF55
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 250 mA, VGS = 0
55
V
VDS = Max rating
VDS = Max rating, TC=125 °C
1 µA
10 µA
VGS = ±16 V
±10 µA
VDS = VGS, ID = 250 µA
2
3
4V
VGS = 10 V, ID = 40 A
0.016 0.018 â¦
Table 5. Dynamic
Symbol
Parameter
Test conditions
gfs
Ciss
Coss
Crss
Qg
Qgs
Qgd
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
VDS > ID(on) x RDS(on)max,
ID= 40 A
VDS = 25 V, f = 1MHz,
VGS = 0
ID = 25 A, VDD = 80 V,
VGS = 10 V
(see Figure 15)
Min. Typ. Max. Unit
- 32
S
5500
pF
- 1130
pF
600
pF
190 258 nC
- 27
nC
65
nC
Table 6.
Symbol
Switching times
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
Test conditions
VDD=25 V, ID=40 A,
RG=4.7 â¦, VGS=10 V
(see Figure 14)
VDD=25 V, ID=40 A,
RG=4.7 â¦, VGS=10 V
(see Figure 14)
Vclamp=40 V, ID=80 A,
RG=4.7 â¦, VGS=10 V
(see Figure 14)
Min. Typ. Max. Unit
35
ns
-
-
190
ns
165
ns
-
-
80
ns
60
ns
- 40 - ns
85
ns
4/16
Doc ID 8177 Rev 6
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