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| STB80PF55_06 Datasheet, PDF (4/13 Pages) STMicroelectronics – P-channel 55V - 0.016Ω - 80A - TO-220 - D2PAK STripFET™ II Power MOSFET | |||
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Electrical characteristics
2
Electrical characteristics
STB80PF55 - STP80PF55
(TCASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 250mA, VGS = 0
VDS = Max rating
VDS = Max rating, TC=125°C
VGS = ±16V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 40A
55
V
1 µA
10 µA
±10 µA
2
3
4V
0.016 0.018 â¦
Table 4. Dynamic
Symbol
Parameter
Test conditions
gfs
Ciss
Coss
Crss
Qg
Qgs
Qgd
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
VDS > ID(on) x RDS(on)max,
ID= 40A
VDS = 25V, f = 1MHz,
VGS = 0
ID = 25A, VDD = 80V,
VGS = 10V
(see Figure 14)
Min. Typ. Max. Unit
32
S
5500
pF
1130
pF
600
pF
190 258 nC
27
nC
65
nC
4/13
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