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| STB80NF55-08_08 Datasheet, PDF (4/15 Pages) STMicroelectronics – N-channel 55 V - 0.0065 Ω - 80 A - TO-220 - D2PAK - TO-247 STripFET™ Power MOSFET | |||
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Electrical characteristics
STP80NF55-08 - STB80NF55-08 - STW80NF55-08
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 µA, VGS = 0
55
V
IDSS
IGSS
Zero gate voltage drain
current (VGS = 0)
Gate body leakage current
(VDS = 0)
VDS = max rating
VDS = max rating@125 °C
VGS = ±20 V
1 µA
10 µA
±100 nA
VGS(th) Gate threshold voltage
VDS = VGS, ID = 250 µA
2
3
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 40 A
0.0065 0.008 â¦
Table 6. Dynamic
Symbol
Parameter
Test conditions
gfs (1) Forward transconductance VDS =15 V , ID = 18 A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS= 0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD= 27 V, ID = 80 A
VGS =10 V
(see Figure 14)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
40
S
3740
pF
830
pF
265
pF
112 155 nC
20
nC
40
nC
4/15
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