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| STB75NH02L_06 Datasheet, PDF (4/13 Pages) STMicroelectronics – N-Channel 24V - 0.0062ohm - 60A - D2PAK STripFET TM III Power MOSFET | |||
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Electrical characteristics
2 Electrical characteristics
STB75NH02L
(TCASE = 25 °C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
V(BR)DSS
Drain-source breakdown
voltage
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
VGS(th)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
RDS(on)
Static drain-source on
resistance
Test conditions
ID = 25 mA, VGS= 0
VDS = 20 V,
VDS = 20 V,Tc = 125°C
VGS = ±20V
VDS= VGS, ID = 250 µA
VGS= 10 V, ID= 30 A
VGS= 5 V, ID= 30 A
Table 4. Dynamic
Symbol
Parameter
Test conditions
gfs (1)
Ciss
Coss
Crss
Qg
Qgs
Qgd
RG
Forward Transconductance VDS =10V, ID = 18A
Input Capacitance
Output Capacitance
VDS =15V, f=1 MHz, VGS=0
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Input Resistance
VDD=10V, ID = 60 A
VGS =5V
Figure 14
f=1MHz Gate DC Bias =0
Test Signal Level =20mV
Open Drain
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Table 5. Switching times
Symbol
Parameter
td(on)
tr
Turn-on delay time
rise time
td(off)
tf
Turn-off delay time
fall time
Test conditions
VDD=10 V, ID=30 A,
RG=4.7â¦, VGS=10V
Figure 15
VDD=10 V, ID=30A,
RG=4.7â¦, VGS=10V
Figure 15
Min. Typ. Max. Unit
24
V
1
µA
10
µA
±100
nA
1
1.8
V
0.0062 0.008
â¦
0.008 0.014
â¦
Min. Typ. Max. Unit
27
S
2050
pF
545
pF
70
pF
17
22
nC
7.7
nC
3.5
nC
1.1
â¦
Min. Typ. Max. Unit
12
ns
200
ns
18
ns
25
ns
4/13
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