 English |
|
|
|
|
|
|
|
| STB75NF75 Datasheet, PDF (4/16 Pages) STMicroelectronics – N-CHANNEL 75V - 0.0095 ohm - 80A TO-220/TO-220FP/D²PAK STripFET™ II POWER MOSFET | |||
| |||
| ◁ |
Electrical characteristics
STB75NF75 - STP75NF75 - STP75NF75FP
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250µA, VGS= 0
75
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125°C
1 µA
10 µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
±100 nA
VGS(th) Gate threshold voltage
VDS= VGS, ID = 250µA
2
3
4
V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 40A
0.0095 0.011 â¦
Table 4. Dynamic
Symbol
Parameter
Test conditions
gfs (1) Forward transconductance VDS = 15V, ID = 40A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f = 1 MHz,
VGS = 0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 60V, ID = 80A
VGS =10V
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
20
S
3700
pF
730
pF
240
pF
117 160 nC
27
nC
47
nC
4/16
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese