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| STB75NF20 Datasheet, PDF (4/16 Pages) STMicroelectronics – N-channel 200V - 0.028 - 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET Power MOSFET | |||
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Electrical characteristics
2
Electrical characteristics
STB75NF20 - STP75NF20 - STW75NF20
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
200
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125°C
IGSS
Gate body leakage current
(VDS = 0)
VDS = ± 20V
VGS(th) Gate threshold voltage
VDS= VGS, ID = 250µA
2
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 37A
1 µA
10 µA
±100 nA
3
4
V
0.028 0.034 â¦
Table 5. Dynamic
Symbol
Parameter
Test conditions
gfs(1) Forward transconductance VDS = 15V, ID= 37A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz,
VGS =0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD= 160V, ID=75A,
VGS= 10V
(see Figure 16)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Table 6. Switching times
Symbol
Parameter
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 100V, ID = 37A
RG= 4.7â¦, VGS= 10V,
(see Figure 15)
Min. Typ. Max. Unit
40
S
3260
pF
640
pF
110
pF
84
nC
18
nC
34
nC
Min. Typ. Max. Unit
53
ns
33
ns
75
ns
29
ns
4/16
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